An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements
نویسندگان
چکیده
منابع مشابه
Integrated Capacitance Bridge An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements
An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements Arash Hazeghi, 2 Joseph A. Sulpizio, 3 Georgi Diankov, David Goldhaber-Gordon, a) and H.S. Philip Wong These authors contributed equally to this work Department of Electrical Engineering, Stanford University Department of Physics, Stanford University Department of Chemistry, Stanford Un...
متن کاملAn integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements.
We have developed a highly sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolution using a small AC excitation at or below k(B)T over a broad temperature range (4-300 K). We have achieved a resolution at room temperature of 60 aF/√Hz for a 10 mV ac excitation at 17.5 kHz, with an improved resol...
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Resonant power conversion at MHz frequencies is useful for miniaturization of power electronics, but requires resonators or inductors with high efficiency. Because litz wire is not effective above several MHz, an alternative winding structure for inductors is required for operation at these frequencies. In this paper, we present resonators with a multi-layer foil winding which can be constructe...
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Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the globa...
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ژورنال
عنوان ژورنال: Review of Scientific Instruments
سال: 2011
ISSN: 0034-6748,1089-7623
DOI: 10.1063/1.3582068